MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of semiconductor device is provided to manufacture a flash memory which a floating gate is continuously extended to source and drain areas in reduced processes comparing to prior art. CONSTITUTION: The manufacturing method of semiconductor device comprises: the first step forming a dummy pattern(103a) on the first conduct type semiconductor substrate(101); the second step forming a source(104) and a drain(105) by injecting the second conduct type impurity into prescribed area of the substrate besides the dummy pattern; the third step forming a wiring layer consisted of conductive substance on the source and drain; the forth step exposing the substrate by selectively removing the dummy pattern; the fifth step forming a gate insulation film(102) and a interfacial insulation film(122) on the exposed substrate; the sixth step forming a conductive film on the gate insulation film and interfacial insulation film; the seventh step a floating gate continuous to the source and drain on the gate insulation film and interfacial insulation film by working the conductive film; the eighth step forming a separating insulation film covering the floating gate; and the ninth step forming a control gate.