METHOD FOR FORMING AN OXIDE USING HELIUM SPUTTERING

摘要

PURPOSE: A forming method of an oxide layer is provided to prevent a damage an edge of a conductive pattern by using He sputtering instead of Ar sputtering. CONSTITUTION: The oxide formation method comprises the step of forming an oxide layer(32) on a semiconductor wafer(30) having a conductive pattern(31) by using He sputtering used helium gases as chemical vapor deposition used high density plasma. The oxide layer(32) is formed by SiH4 and O2 gas. The substrate temperature of the semiconductor wafer(30) is less than 400°C. The volume of the He gas is two times of the SiH4 + O2 gas. The rear of the wafer applies a bias power of 200 watts.