发明名称 |
TRENCH CAPACITOR HAVING AN EPITAXIAL BURIED LAYER |
摘要 |
PURPOSE: A trench capacitor is provided to improve a surface roughness of a trench sidewall. CONSTITUTION: The trench capacitor(310) has a lower side which is extended and has an epitaxial silicon layer(365). The trench capacitor is formed so as to have a bottle shape. The epitaxial layer lines the sidewall of the lower side of the extended trench. The epitaxial layer serves as a buried plate of the trench capacitor. A diffusion region(367) surrounds the lower side of the extended trench to improve an impurity concentration of the epitaxial layer. The diffusion region(367) is formed by an atmosphere doping, a plasma doping, or a plasma immersion implantation.
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申请公布号 |
KR20000006496(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19990024424 |
申请日期 |
1999.06.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION.;SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SHUREMS MARTIN;MANDELMAN JACK;HOEFFER YOAHIM;SHAFFER HERBERT;SHUTENGEL RAINHART |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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