发明名称 TRENCH CAPACITOR HAVING AN EPITAXIAL BURIED LAYER
摘要 PURPOSE: A trench capacitor is provided to improve a surface roughness of a trench sidewall. CONSTITUTION: The trench capacitor(310) has a lower side which is extended and has an epitaxial silicon layer(365). The trench capacitor is formed so as to have a bottle shape. The epitaxial layer lines the sidewall of the lower side of the extended trench. The epitaxial layer serves as a buried plate of the trench capacitor. A diffusion region(367) surrounds the lower side of the extended trench to improve an impurity concentration of the epitaxial layer. The diffusion region(367) is formed by an atmosphere doping, a plasma doping, or a plasma immersion implantation.
申请公布号 KR20000006496(A) 申请公布日期 2000.01.25
申请号 KR19990024424 申请日期 1999.06.26
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION.;SIEMENS AKTIENGESELLSCHAFT 发明人 SHUREMS MARTIN;MANDELMAN JACK;HOEFFER YOAHIM;SHAFFER HERBERT;SHUTENGEL RAINHART
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/108;H01L29/94;(IPC1-7):H01L27/108 主分类号 H01L27/04
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