| 摘要 |
PURPOSE: A semiconductor component having a split floating gate is provided to reduce the space required by a cell by using an insulating structure. CONSTITUTION: In a semiconductor component, in particular an EEPROM, an avalanche breakdown from a buried channel (14) to a substrate (10) is avoided by a local thickening of a gate dielectric (an insulating structure 22) at the transition to a tunnel dielectric (18). As a potential barrier is thus created, the gate and tunnel dielectrics may have the same thickness. Thereby, the space required by such a cell is reduced.
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