发明名称 METHOD OF FORMING A METAL WIRE IN SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method of forming a metal wire is provided to previously form a metal oxide film between a metal conductive layer and a reflecting preventive film so as to prevent a metal ring defect. CONSTITUTION: The method comprises the steps of: forming a diffusion preventive film(20), a glue layer(30), a metal conductive layer(400) and a reflecting preventive film(50) in order so as to form a metal wire, performing a heat treating process so as to bury the metal wire into a contact hole. In the method, a metal oxide film is formed between the metal conductive layer and the reflecting preventive film. the metal oxide film is formed by a thermal oxidation. Thereby, a metal ring defect is prevented and a yield rate is increased.
申请公布号 KR20000004102(A) 申请公布日期 2000.01.25
申请号 KR19980025503 申请日期 1998.06.30
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 AHN, HI BOK;KIM, DONG IL
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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