METHOD FOR FORMING FINE CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a fine contact hole of a semiconductor device is provided to improve yield of process and reliability of the device. CONSTITUTION: A gate oxide film is grown on a semiconductor substrate(1) to form a gate poly and a mask oxide film. The mask oxide film is removed using a gate mask. The gate poly is etched using the mask oxide film to from a spacer oxide film(6). A nitride film(7) is then deposited on an entire surface. A first contact mask is formed on an insulating film(9) using a photoresist. The insulating film is then etched using a first contact mask. The insulating film is etched using the nitride film as an etching stop film until an upper portion of the nitride film is exposed. The exposed nitride film is then etched to form a first contact hole. A line poly(13) is deposited and filled into the first contact hole so that no contact hole is formed in a smoothening process using chemical mechanical polishing. An oxide film(15) is deposited on the contact poly as a fine line insulating film. A second contact mask is defined on the oxide film using the photoresist. The oxide film is then etched using the photoresist mask and then the photoresist mask is removed to form a fine contact hole(19).