METHOD OF MANUFACTURING A GATE ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a gate electrode of a semiconductor device is provided to omit re-oxidation process inducing an abnormal oxidization phenomenon. CONSTITUTION: A method of manufacturing a gate electrode of a semiconductor device comprises: a first step of sequentially multi-laying a gate insulation layer, a polysilicon layer and a metal element containing layer on a semiconductor substrate; a second step of patterning a gate electrode by selectively etching the metal element containing layer and the polysilicon layer; and a third step of partially etching sidewalls of the patterned polysilicon layer.