METHOD OF FABRICATING A STORAGE NODE FOR A STORAGE CAPACITOR

摘要

PURPOSE: A storage node fabricating method is provided to reduce a variation on a pad SiN and to reduce a sensitive etching and recess process. CONSTITUTION: The storage node fabricating method comprises the steps of: etching a trench(11) on a surface of a semiconductor substrate(10); forming a dielectric layer(14) on sidewalls(12) of the trench; removing a part of the dielectric layer in order to expose a region below an upper part of the sidewall; growing an oxide layer on the upper part of the sidewall; removing a remnant part of the dielectric layer from the sidewall of the trench; forming a buried plate(17) by a doping; providing a node dielectric(18) to form a trench dielectric on a lower sidewall of the trench; and forming an internal electrode(19) in the trench.