Conductivity improvement in thin films of refractory metal

摘要

A method of increasing conductivity of a refractory metal film disposed upon a substrate includes exposing the refractory metal film to an atmosphere comprising a silane of the form SinH(2n+2), where n is a positive integer, while subjecting the refractory metal film to a temperature in excess of 700 degrees Celsius and to a base pressure not exceeding 10-8 torr for a time period which is chosen to be sufficiently long to increase the conductivity of the refractory metal film to a correspondingly sufficient degree.