| 摘要 |
PURPOSE: A memory structure is provided to require less circuit region while providing a high bandwidth. CONSTITUTION: The memory structure comprises an array of nonvolatile memory cells(130); a first sampling and holding circuit(121, 122); a select circuit for selecting as a column line voltage from a set of voltages including a first voltage from the first sampling and holding circuit during a write operation; a column decoder(132) connected to the array and the select circuit, for selecting a column line; and a voltage generator(150) for generating a first write signal a first write signal having a voltage according to a data input signal, wherein the first sampling and holding circuit in a pipeline is connected to sample the first write signal.
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