METHOD OF FORMING SPUTTERING LAYER, EQUIPMENT FOR FORMING SPUTTERING LAYER AND FABRICATING METHOD OF EQUIPMENT

摘要

PURPOSE: Method of forming sputtering layer and equipment for forming sputtering layer and fabricating method of the equipment are provided to control a composition of a chemical compound easily. CONSTITUTION: The method of forming sputtering layer comprises the steps of: supplying alternating voltage or alternating current to all or part of the wall, which is placed external of space between a wafer and a target; generating a high frequency power to reduce electron temperature of plasma; including at least a kind of gas of helium, neon, xenon and krypton as sputter gas; supplying minus voltage to all or part of the wall, which is placed external of space between a wafer and a target.