MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE ABLE EFFECTIVE PERFORMANCE OF HYDROGEN PASSIVATION

摘要

PURPOSE: A manufacturing method of semiconductor device able effective performance of hydrogen passivation is provided to suppress the growth of aluminum within a metal wiring layer therefore prevent short-cut. CONSTITUTION: The manufacturing method of semiconductor device able effective performance of hydrogen passivation comprises: a step forming the first insulation layer(13) on a semiconductor substrate(11); a step forming a gate electrode(14) on the first insulation layer; a step forming the second insulation layer(22) on the gate electrode; a step performing hydrogen passivation on the interface between the semiconductor substrate and the first insulation layer under the first temperature after the second insulation layer is formed; a step metal wiring layers(31,41) on the second insulation layer; and a step heating the metal wiring layers under the second temperature lower than the first temperature.