METHOD FOR FORMING A DIFFUSION PREVENTING LAYER

摘要

PURPOSE: A diffusion preventing layer formation method is provided to simplify the manufacturing process and improve a uniformity of the diffusion preventing layer by simultaneously performing TiN layer and TiSi2 forming processes using an IMP(ionized metal plasma) method. CONSTITUTION: The method comprises the steps of: preparing a silicon substrate(1); forming an insulating layer(2) having contact holes(3) to expose a portion of the silicon substrate(1); forming a first Ti layer(5) at bottom and inner walls of the contact holes and forming a second Ti layer(7) by IMP; and performing an RTN(rapid thermal nitration), thereby simultaneously forming a TiSi2 layer(13) at bottom portion connected to the silicon substrate(1) and a TiN layer(11) at top portion of the second Ti layer(7).