METHOD FOR FORMING AN ISOLATION LAYER OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An isolation layer forming method is provided to minimize a bird's beak of the isolation layer and improve an yield. CONSTITUTION: The method comprises the steps of: forming a thermal oxide layer(2) on a silicon substrate(1) by dry oxidation process at high temperature; exposing an active region(4) of the silicon substrate(1) by selective etching the thermal oxide layer(2) using a photoresist pattern(3); selective growing a silicon epitaxial layer(5) on the exposed silicon substrate using reactive gas contained Cl, and simultaneous forming a polysilicon layer(6) on the thermal oxide layer(2); and removing the thermal oxide layer(2) and the polysilicon layer(6) by CMP.