发明名称 LEVEL SHIFTER AND A SEMICONDUCTOR MEMORY DEVICE USING THE SAME
摘要 PURPOSE: A level shifter is provided to change input signals of different voltage levels to a signal of a constant voltage level. CONSTITUTION: The level shifter comprises: first and second level rising/falling circuits(42, 44) for receiving an input signal(XDI) and an inverted input signal(XDIB) respectively to output first and second output signals(DID, DIBU), wherein a high level of the input and inverted input signals(DID, DIBU) falls and a low level thereof rises; and a sense amplifier(46) for amplifying a level difference between the first and second output signals(DID, DIBU) from the first and second level rising/falling circuits(42, 44) to output a third output signal, wherein the first level rising/falling circuit(42) comprises a first portion for outputting the first output signal, wherein the voltage of the high level of the input signal is applied as a power supply voltage, the high level of the input signal falls and the low level thereof rises, and a second portion for outputting the first output signal, wherein the voltage of the high level of the third output signal is applied as a power supply voltage, the high level of the input signal falls and the low level thereof rises.
申请公布号 KR20000004192(A) 申请公布日期 2000.01.25
申请号 KR19980025610 申请日期 1998.06.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, BYUNG CHEOL;YU, HAK SOO;LEE, KWANG JIN
分类号 G11C11/409;G11C7/06;G11C11/34;H03K19/0185;(IPC1-7):G11C11/34 主分类号 G11C11/409
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