METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of capacitors is provided to enhance surface area of a storage electrode by forming a copper having selective depositing property on a lower electrode using MOCVD(metal organic CVD). CONSTITUTION: The method comprises the steps of: forming an interlayer dielectric(20) having contact holes on a semiconductor substrate(10) having transistors; forming a lower electrode(30) on the resultant structure; performing plasma treatment used nitrogen gas on the surface of the lower electrode(30) in order to enhance deposition rate of copper; and selective depositing a copper(40) having concave and convex on the lower electrode, thereby increasing the surface area of storage electrode.