METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A fabrication method of capacitors is provided to prevent a bridge between capacitors and an oxidation of a lower electrode by forming an inner cylinder storage electrode having a slope. CONSTITUTION: The method comprises the steps of: forming an interlayer dielectric(21) having a first contact hole on a semiconductor substrate(20) having transistors; forming an insulating spacer(22) at both sidewalls of the first contact holes; depositing a first conductive layer(23) on the resultant structure to fill the contact hole; etching the conductive layer(23) using a mask(24); forming a sacrificial oxide(25) having a second contact hole to expose the center portion of the first conductive layer(23); forming a second conductive layer(27) on the resultant structure, wherein the second conductive layer(27) is formed by overhang on the upper part of the second contact hole; isolating the upper part of the second conductive layer(27) by CMP(chemical mechanical polishing) method; and removing the sacrificial oxide(25).