发明名称 PRODUCTION OF SILICON SINGLE CRYSTAL AND EQUIPMENT THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a production method by which identification of the separation between a single crystal bar and a melt is automated and also, the operation for separating a single crystal bar from a melt in the latter half of a tailing stage is automated and further, a single crystal can be produced through unmanned automatic control, and also to provide the equipment for the method. SOLUTION: This production method comprises: bringing a seed crystal into contact with a melt or placing a seed crystal on a melt, to perform the necking operation and to form a conical part by gradually increasing the crystal diameter; thereafter, pulling up a single crystal having a prescribed diameter to form a body having a prescribed length; thereafter, gradually decreasing the crystal diameter to form a tail; and separating the resulting grown single crystal from the melt, wherein separation of the tail of the grown single crystal from the melt is detected from a change in temp. of the surface of the melt.
申请公布号 JP2000026197(A) 申请公布日期 2000.01.25
申请号 JP19980192850 申请日期 1998.07.08
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 MAEDA AKIO;TAKEYASU YUKINOBU
分类号 G01N25/02;C30B15/20;C30B29/06;(IPC1-7):C30B29/06 主分类号 G01N25/02
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