MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND APPARATUS THEREOF

摘要

PURPOSE: A manufacturing method of semiconductor device and apparatus thereof is provided to provide high quality and thin oxide nitride film. CONSTITUTION: The manufacturing method of semiconductor device comprises: (a) a step carrying a silicon wafer into a reaction chamber having the first and second gas intakes, and sealing the chamber by using an O-ring; (b) a step heating the wafer to oxidation temperature with sustaining the chamber under oxidation atmosphere by injecting oxidation gas into the first gas intake after the (a) step; (c) a step forming a thermal oxidation film on the wafer by injecting wet oxidation atmosphere into the first gas intake; (d) a step cleaning the chamber with an inert gas; (e) a step converting the thermal oxidation film into an oxide nitride film by injecting NO or N2O gas into the second gas intake with sustaining the wafer over 700°C or anneal temperature than the oxidation temperature.