发明名称 |
DATA SENSING APPARATUS OF FLASH MEMORY |
摘要 |
PURPOSE: In order to prevent the malfunction resulting from reduction of a sensing range, a data sensing apparatus of a flash memory is provided to sense a voltage level and varying a sensing range based on the source voltage variations while reading the data stored in a cell array of the flash memory. CONSTITUTION: The data sensing apparatus comprises a main cell load element(35) for controlling the load of a main cell bias element(25) for biasing a main cell(15), a reference cell load element(30) for controlling the load of a reference bias element(20) for biasing a reference cell(10), a source voltage sensor(60) for sensing a voltage level of source voltage, a load controller(40) for controlling a load value of the reference cell load element based on a sensing value of the source voltage sensor and a control signal, and sense amplifier(50) for sensing and determining the difference of the currents flowing in the reference cell bias element and in the main cell bias element.
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申请公布号 |
KR20000004724(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19980026217 |
申请日期 |
1998.06.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
OH, SANG WON;KIM, GYEONG AE |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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