发明名称 DATA SENSING APPARATUS OF FLASH MEMORY
摘要 PURPOSE: In order to prevent the malfunction resulting from reduction of a sensing range, a data sensing apparatus of a flash memory is provided to sense a voltage level and varying a sensing range based on the source voltage variations while reading the data stored in a cell array of the flash memory. CONSTITUTION: The data sensing apparatus comprises a main cell load element(35) for controlling the load of a main cell bias element(25) for biasing a main cell(15), a reference cell load element(30) for controlling the load of a reference bias element(20) for biasing a reference cell(10), a source voltage sensor(60) for sensing a voltage level of source voltage, a load controller(40) for controlling a load value of the reference cell load element based on a sensing value of the source voltage sensor and a control signal, and sense amplifier(50) for sensing and determining the difference of the currents flowing in the reference cell bias element and in the main cell bias element.
申请公布号 KR20000004724(A) 申请公布日期 2000.01.25
申请号 KR19980026217 申请日期 1998.06.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD 发明人 OH, SANG WON;KIM, GYEONG AE
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
代理机构 代理人
主权项
地址