SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A manufacturing method is provided to reduce a contact resistance between bit line and word line used in semiconductor device. CONSTITUTION: The method comprises the step of: forming a doped polysilicon film(13a) on a semiconductor substrate and tungsten silicide film(13b); forming a cap layer(13c) on the top of the tungsten silicide film; forming a word line by patterning a predetermined portion of the cap layer, the tungsten silicide film and doped polysilicon film; forming an inter-layer insulating film(15) on the semiconductor substrate including the word line; etching the inter-layer insulating film so as to expose the cap layer in the word line; forming a bit line made of the tungsten silicide film and the doped polysilicon film so as to be in contact with the exposed word line; and diffusing an impurity in the doped polysilicon of bit line toward the cap layer. Thereby it is possible to acquire the semiconductor device having the reduced contact resistance between bit line and word line.