METHOD FOR FORMING AN INTERLAYER INSULATOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of an interlayer insulator is provided to a improve a uniformity of the interlayer insulator being not void without introducing the processes of high temperature and doping. CONSTITUTION: The interlayer insulator formation method comprises the steps of: forming a conduction line(21) on a predetermined lower layer(20); forming an MTO(medium temperature oxide) layer(22) on the entire surface of the resultant structure; partially etching the MTO layer(22) by an argon(Ar) sputtering method using a plasma contained inactive gases; and forming an interlayer insulator(23) made of BPSG(borophosphorous silicate glass).