| 摘要 |
PURPOSE: A capacitor structure and method thereof are provided to improve electrical properties of devices by using an oxygen diffusion preventing layer formed in a lower electrode of the capacitor. CONSTITUTION: The capacitor comprises an interlayer dielectric(41) having contact holes on a semiconductor substrate(40) having cell transistors; a plug layer(42) filled into the contact holes of the interlayer dielectric; a first lower electrode(43a) connected to the plug layer; an oxygen diffusion preventing layer(44a) having same area with the first lower electrode(43a); a second lower electrode(43b) having high work function compared to the first lower electrode; a third lower electrode(43c) having higher height compared to the first lower electrode, the oxygen diffusion preventing layer and the second lower electrode, and formed at both sidewalls of the first lower electrode, the oxygen diffusion preventing layer and the second lower electrode; and a dielectric layer(45) formed on the surface of the first, second and third lower electrodes having the oxygen diffusion preventing layer therein.
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