| 摘要 |
PURPOSE: A semiconductor memory device is provided to reduce an affect of a parasite resistance in source and drain regions and to improve an integrity degree. CONSTITUTION: The semiconductor memory device comprises a first contact region and a second contact region. The first contact region has a plurality of contacts in a source/drain region(111, 112) on one side of a third wiring(103c), and the second contact region has a plurality of contacts in a source/drain region(111, 112) on the other side of the third wiring(103c). The source region(11) is connected to a first wiring(103a) through the contacts of the first contact region, and the drain region(112) is connected to a second wiring(103b) through the contacts of the second contact region. A wiring layer having a less resistance than the source/drain region(111, 112) is formed along the source/drain region(111, 112) below the third wiring(103c). The source region(111) of the first contact region and the source region(111) of the second contact region are connected by the wiring layer having a less resistance than the source region(111). The drain region(112) of the first contact region and the drain region(112) of the second contact region are connected by a wiring layer having a less resistance than the drain region(112). |
