| 摘要 |
PURPOSE: The circuit is to prevent read data from being deformed when a multilevel sensing amplifier reads data secondarily. CONSTITUTION: The circuit comprises a first and a second sensing amplifier(10, 70) provided in a bit line of a DRAM and in a bit line of left and right memory cells, a feedback element(60) provided on bit lines, a switching transistor for dividing a reference bit line, and a comparator(50) provided on a bit line. The comparator is connected on its node to a NMOS transistor. In the comparator, a source of the NMOS transistor is connected to a half supply voltage, a drain is connected to the node, and a gate is connected to an equalizing signal.
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