ISOLATING METHOD OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An STI(shallow trench isolation) method of semiconductor devices is provided to prevent a short between metal and well due to a misalign of metal contact by using a trench being a width of lower part is more narrow than that of the upper part. CONSTITUTION: The STI method comprises the steps of forming a spacer(108) for device isolation on a semiconductor substrate(100); forming an ion-implanting plug(110) in the isolation region using the spacer(108) as an implantation mask; forming an STI region(112) by etching the exposed semiconductor substrate using the spacer(108) as a mask; removing the ion-implanting plug(110) by wet-etching, thereby the width of lower part of the STI region(112) is more narrow than that of the upper part; and depositing a trench oxide(114) to the STI region and flattening the trench oxide(114), thereby forming an STI layer.