发明名称 METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A contact forming method of semiconductor device is disclosed to improve a reliability and yield of manufacturing process of semiconductor device. CONSTITUTION: The method includes changing a contact shape formed on reticle into a doughnut-shaped contact. Thereby, it is possible to reduce damages applied to a gate oxide film due to a crowding of current and a junction spiking generated during ESD(Electro Static Discharge) test. Also, a excessive reaction of Ti and Si generating when forming a large contact is suppressed, so that a junction leakage can be reduced
申请公布号 KR20000004552(A) 申请公布日期 2000.01.25
申请号 KR19980025996 申请日期 1998.06.30
申请人 HYUNDAI ELECTRONICS IND. CO., LTD 发明人 CHOI, YONG JIN
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
代理机构 代理人
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