发明名称 |
METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A contact forming method of semiconductor device is disclosed to improve a reliability and yield of manufacturing process of semiconductor device. CONSTITUTION: The method includes changing a contact shape formed on reticle into a doughnut-shaped contact. Thereby, it is possible to reduce damages applied to a gate oxide film due to a crowding of current and a junction spiking generated during ESD(Electro Static Discharge) test. Also, a excessive reaction of Ti and Si generating when forming a large contact is suppressed, so that a junction leakage can be reduced
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申请公布号 |
KR20000004552(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19980025996 |
申请日期 |
1998.06.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
CHOI, YONG JIN |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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