METHOD FOR FORMING COPPER THIN FILM ON SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a copper thin film on a semiconductor device is provided to improve a copper deposition speed and to maintain an excellent step coverage of a CVD process. CONSTITUTION: The method for forming a copper thin film on a semiconductor device comprises the steps of: evaporating volatile compound of copper including Cu+1 beta-diketonate; and forming a copper thin film by reacting by directly adding hydrogen when reacting with a substrate by adding volatile compound of the evaporated copper with a carrier gas including hydrogen, or when reacting with the substrate by mixing volatile compound of the evaporated copper with the carrier gas.