METHOD FOR FORMING AN ISOLATING LAYER OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: An isolating layer formation method is provided to improve bird's beak and step-coverage and simplify manufacturing process and reduce manufacturing cost by using oxygen ion implantation. CONSTITUTION: The method comprises the steps of: forming a mask pattern(100) on a semiconductor substrate(10) to expose a nonactive region of the substrate; forming an oxygen ion layer(13) by implanting heavily doped oxygen ions into the exposed substrate; forming an oxide layer in the substrate(10) of the nonactive region by annealing the substrate; and removing the mask pattern(100). The oxygen ion formation step further comprises the sub-steps of first implanting heavily doped oxygen ions by a first implantation energy, and second implanting heavily doped oxygen ions by a second implantation energy having high energy compared to the first implantation energy.