METHOD FOR FORMING METAL WIRES OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A metal wiring formation method is provided to prevent a notch and a generation of polymer by preventing an exposure of the metal wire and thinning the thickness of photoresist pattern. CONSTITUTION: The method comprises the steps of sequentially depositing a barrier metal layer(13), an aluminum layer(14) and a scattered reflection preventing layer(15) on a silicon substrate(11) having an interlayer dielectric(12); depositing a hard masking metal(16) having suitable etching selectivity with the AL layer(14); patterning the hard masking metal(16) and the scattered reflection preventing layer(15) using a photoresist pattern(17a); removing the photoresist pattern; and forming a metal wire(18) by patterning the AL layer(14) and the barrier metal layer(13) using the hard masking metal pattern as a mask.