Igbt with integrated control

摘要

A monolithic IGBT and control circuit therefor are integrated into a common chip. The IGBT is formed in a first area of the chip and the control circuit is formed in a second laterally spaced area and in a P well. Means are provided to prevent hole injection from the P+ substrate into the P well during IGBT operation. The means includes a sufficient spacing between the areas; a P+ collection region between the areas or an N+ diffusion between the areas which is connected to the P+ substrate. The areas are surrounded by a common field termination structure which, however, leaves a small surface bridge between the two areas. Control conductors from the control area to the IGBT area cross over the narrow area, and not over the field terminations. A lateral PNP transistor which is integrated in the chip and is external of the IGBT area is connected to the central N+ diffusion between IGBT and control areas and permits its connection to the P type substrate only when the IGBT area conducts.