GAN SINGLE CRYSTAL BOARD AND A PROCESS THEREOF

摘要

PURPOSE: GaN single crystal board is provided to become independent with a large area and rare bending. CONSTITUTION: In the manufacturing process of GaN single crystal board consisted of forming process for mask having zigzag type or stripe type window on GaAs board, forming process for GaN buffer layer by HVPE(hydride vapor phase epitaxy) or MOC(metallorganic chloride) method in low temperature, forming process for phytexial layer on GaN bulkily by HVPE in high temperature and removing process of GaAs board.