SEMICONDUCTOR DEVICE HAVING IMPROVED INTERLAYER CONTACT AND METHOD OF FABRICATING THE SAME

摘要

PURPOSE: Semiconductor device having a improved interlayer contact is provided to reduce the number of processing steps and capacitance between impurities region and substrate. CONSTITUTION: The semiconductor device having a improved interlayer contact comprises: many active regions having impurities regions, field regions formed by silicon nitride layer for insulating electrically between the active regions, interlayer dielectrics formed on the impurities regions and the field regions, and contact hole formed in the interlayer dielectrics to be expose the impurities regions. As a result, diffusion regions are not needed and leakage current is reduced.