SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A method of manufacturing a highly integrated semiconductor device having fine patterns is provided to reduce a parasitic capacitance among wiring and prevent insulation layer from exfoliating. CONSTITUTION: A method of manufacturing a semiconductor device comprises the steps of: preparing a semiconductor substrate; forming an insulation layer on the semiconductor substrate; forming a conductive layer for making wiring on the semiconductor substrate on which the insulation layer is formed; forming wiring disposed on patterns determined beforehand by patterning the conductive layer for making wiring; forming a layer for making a sidewall layer of wiring including fluorine-containing silicon oxide material on the semiconductor substrate to cover the wiring; forming sidewall layers of wiring including fluorine-containing silicon oxide material on side edge portions of wiring by etching back the layer to make sidewall layers of wiring; and forming an insulation layer among wiring including fluorine-containing silicon oxide material on the semiconductor substrate to cover the wiring and the sidewall layers of wiring.