| 摘要 |
PURPOSE: A semiconductor structure relates to a conductive fuse having a self-alignment isolation cap, and provides a thin dielectric layer controlled to be self-aligned on the fuse. CONSTITUTION: The semiconductor structure includes a semiconductor substrate(10); an electric conductive level (1) on the substrate; a conductive fuse (21) which is positioned on the conductive level, and has a self-alignment dielectric etching stop layer. Insulation layer (3) is positioned on the conductive level, is positioned between metal lines of the conductive level, and is not positioned on the fuse. The semiconductor structure includes an electric interconnection part (4) about a selected position of the conductive level. Thereby, a thickness deviation is reduced, a pitch between fuses is reduced, and many redundancy circuits are provided to the memory device. |
