INTEGRATED CIRCUIT AND METHOD THEREOF

摘要

PURPOSE: An IC(integrated circuit) and method thereof are provided to improve a parasitic capacitance, a crosstalk and an eddy current by using polycrystalline silicon substrate having a high resistivity instead of SOI(silicon on insulator) or SOS(silicon on sapphire) substrates. CONSTITUTION: The IC device comprises a polycrystalline silicon substrate(21) having a resistivity of 1 kilo ohm-cm more than and a thickness of 0.1 millimeters more than; a thin single crystalline semiconductor layer(22) having a thickness of 15 micrometers less than and formed on the substrate(21); and an integrated circuit(24) formed on the single crystalline semiconductor layer(22). A silicon oxide(23) is formed between the polycrystalline silicon and the single crystalline silicon.