| 摘要 |
PURPOSE: The method is provided to reduce damages in silicon wafer in fabricating a BAA(Blanking Aperture Array)-typed deflection aperture array by improving wet etch method. CONSTITUTION: The method is comprising the steps of; forming wiring patterns of the substrate; forming a dielectric layer on the substrate to cover the wiring patterns; forming recesses correspond to the apertures separately in the substrate; forming contact holes in the dielectric layer adjacent to the recesses for the exposure of the wiring patterns; forming a conducting layer pattern on the dielectric layer; forming an electrode bar of the electrostatic deflector, connected electrically to the wiring patterns by plating with the conducting layer in the contact holes separately; removing the conducting layer; and removing a part of the opposing side of the substrate in a predetermined location by wet etching, and shutting off the opposing side and the other side of the substrate.
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