| 摘要 |
PROBLEM TO BE SOLVED: To inhibit generation of wrinkles on a substrate film when continuously forming a thin film on the surface of a film substrate having moisture- absorption characteristics such as TAC, etc., using a normal pressure plasma. SOLUTION: In this process, under a pressure around atmospheric pressure, a film substrate F is passed between counter electrodes 11, 12, a pulse voltage is applied between the counter electrodes 11, 12 to generate a discharge plasma, and a thin film is continuously formed on the surface of the film substrate F using this discharge plasma. Here, a thin film is formed by applying a pulse voltage between counter electrodes 11, 12 to yield an electric field strength of from 1 to 90 kV/cm under a gas atmosphere comprising from 0.01 to 5 vol.% metal element-containing alkoxide and from 50 to 99.99 vol.% argon gas, and the temperature of the film substrate F during film formation is controlled at 100 deg.C or lower to inhibit the fluctuation of temperature (moisture content) of the film substrate in the plasma discharge space. |
