发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE: A semiconductor integrated circuit having a protective circuit for discharging an over voltage and an electrostatic charge is disclosed. CONSTITUTION: The semiconductor IC comprises a component(3) which is formed on a semiconductor substrate (2) and comprises an active PN junction (6) formed between a first semiconductor region (4) with a first type of conductivity and a second semiconductor region (5) with a second type of conductivity; and a protective circuit (8) which is associated with the component (3) for discharging over voltages and electrostatic charges. The protective circuit (8) associated with the component (3) comprises a protective PN junction (9)which is formed on a semiconductor carrier (7) and has a first semiconductor carrier region (10), which is disposed in the semiconductor carrier (7) and has the first type of conductivity, and a second semiconductor carrier region (11) having the second type of conductivity. The second semiconductor carrier region (11) with the second type of conductivity is electrically coupled to the first semiconductor region (4) with the first type of conductivity formed in the semiconductor substrate (2).
申请公布号 KR20000004978(A) 申请公布日期 2000.01.25
申请号 KR19987007589 申请日期 1998.09.25
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 KUHLMANN, WERNER;STATH, NORBERT;ALTHAUS, HANS RUDWIG;SPATH, WERNER
分类号 H01L33/64;H01S5/00;H01S5/026;(IPC1-7):H01L33/00 主分类号 H01L33/64
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