发明名称 PLASMA CVD SYSTEM AND METHOD
摘要 PROBLEM TO BE SOLVED: To improve the quality of film formation by facilitating the heat exchange between a gaseous starting material and a plama jet, and eliminating the thermal pinch effect of the plasma jet at the time of the heat exchange. SOLUTION: A plasma ejected from a plasma torch 1 is collided with a gaseous starting material jet 23 of the raw material of a film from the front, and heat exchange is executed to form the radical of the gaseous starting material. The flow 25 of this radical is introduced into a substrate 13 arranged in the vicinity, and the surface of the substrate 13 is stuck with the radical, by which film formation is executed.
申请公布号 JP2000026976(A) 申请公布日期 2000.01.25
申请号 JP19980197157 申请日期 1998.07.13
申请人 KOMATSU LTD 发明人 KITAHASHI MASAMITSU
分类号 H05H1/46;C23C16/26;C23C16/27;C23C16/44;C23C16/455;C23C16/50;C30B25/02;C30B29/04;H01L21/205;H01L21/31 主分类号 H05H1/46
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