| 摘要 |
PROBLEM TO BE SOLVED: To form a thin silicon carbide film at a high rate by using a silicon carbide-base sputtering target having a specified relative density or above. SOLUTION: The silicon carbide-base sputtering target has >=98%, preferably >=99% relative density and contains at least one selected from boron, carbon, alumina and a rare earth metal. The primary grain diameter of the silicon carbide is <=2 μm and the target is preferably bonded to a metallic backing plate contg. copper. A silicon carbide-base thin film is formed by sputtering using the target and the objective phase change type optical recording medium is produced. A sintering aid such as boron, carbon, alumina or a rare earth metal is added to silicon carbide and they are sintered at >=1,900 deg.C by pressureless sintering, hot pressing, HIP or other method to obtain a dense sintered compact as the sputtering target. The thin silicon carbide film is formed at a high rate and the optical recording medium is produced at a low cost. |
