| 摘要 |
PURPOSE: A chemical mechanical polishing apparatus is provided to control a speed of removing a target layer to be polished so as to prevent a removing area from being increased in a chemical mechanical polishing process. CONSTITUTION: In the apparatus, a carrier base(100), on which a wafer is attached, is provided with a plurality of holes(102) through which air is introduced to improve the homogeneity of the polishing process. An edge of the carrier base is comprised of a plurality of blocks and fixed by a screw. The blocks have different steps each other. The height of the carrier base is adjusted from a portion in which the removing speed is most high. Thereby, a force exerted on the edge of the wafer is reduced so that the removing speed is facilely controlled.
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