发明名称 |
SEMICONDUCTOR MEMORY DEVICE HAVING AN INCREMENT SPEED DRIVE SENSE AMPLIFIER AND A STABLE POWER SUPPLY CIRCUIT OF A SOURCE FOLLOWER TYPE |
摘要 |
PURPOSE: A semiconductor memory device has an increment speed drive sense amplifier and a stable power supply circuit of a source follower type. CONSTITUTION: The semiconductor memory device comprises: a select circuit(26 to 28) which selects either one of a common power supply voltage(Vii) and a higher power supply voltage(Vjj) than the voltage(Vii) as a power supply voltage(VH0) in response to select control signals(SC0, /SC0); a select control circuit(22) which generates the select control signals(SC0, /SC0) so that the select circuit(26 to 28) selects the voltage(Vii) during an inactivation of a bank active signal(BRAS0) and the voltage(Vjj) in response to an activation of the signal(BRAS0) during a predetermined period; and a sense amplifier driving circuit(111 to 113) which supplies a ground voltage and the power supply voltage(VH0) to a sense amplifier string in response to an activation of a sense amplifier control signal.
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申请公布号 |
KR20000006548(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19990025135 |
申请日期 |
1999.06.29 |
申请人 |
FUJITSU LTD. |
发明人 |
MORIGAORU;MACHMIYAMASATO;GITAMOTOAYAKO;YAMADASHINICHI;ISIIYUKI;KANOUHIDEKI;TAKITAMASATO |
分类号 |
G11C7/06;(IPC1-7):G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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