| 摘要 |
PURPOSE: A fabrication method of a capacitor is provided to increase a capacitance of the capacitor using an HSG(hemi-spherical grain) layer. CONSTITUTION: The method comprises the steps of: forming insulating patterns(350,,360,370) having contact holes to expose a portion of a semiconductor substrate(100) having COB(capacitor on bit line) structure; forming a heavily doped silicon layer(510) to fill the contact hole; forming a first lower electrode pattern(515) having a height less than the height of the insulation patterns by etching the heavily doped silicon layer(510). thereby preventing the first lower electrode pattern from following etching step; forming a lightly doped silicon layer; forming a second lower electrode pattern(530) by etching the lightly doped silicon layer; and forming an HSG layer(550) on the second lower electrode pattern(530), thereby forming a lower electrode including the first lower electrode pattern(515), the second lower electrode pattern(530) and the HSG pattern(550).
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