METHOD FOR FORMING A CONTACT HOLE OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A forming method of contact hole is provided to improve an insulating property between a bit line, a conductive pad for storage node and a gate electrode. CONSTITUTION: The method comprises the steps of: forming a first insulating layer on a semiconductor substrate(100) having gate electrode patterns(142); forming an interlayer dielectric(154) on the first insulating layer; forming contact holes(156) between the gate electrode patterns by etching the interlayer dielectric(154); forming a second insulating layer on the resultant structure; forming a spacer(160) at both sidewalls of the contact hole(156) by etch-back the second insulating layer; and etching the first insulating layer using the spacer(160) and the interlayer dielectric(154) as a mask to expose the semiconductor substrate(100).