发明名称 |
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
摘要 |
PURPOSE: A nonvolatile semiconductor storage device in which multilevel information is to be stored in one memory cell by setting a plurality of thresholds. CONSTITUTION: The each bit of data composed a plurality of bits is separately written on and read from one memory cell and the data are erased, in accordance wth address signals or control signals. Specifically, a memory array is accessed in accordance with three dimensional addresses of X,Y,and Z addresses and a plurality of bit data in one memory cell can be recognized with the Z address.
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申请公布号 |
KR20000005160(A) |
申请公布日期 |
2000.01.25 |
申请号 |
KR19987007828 |
申请日期 |
1998.10.01 |
申请人 |
HITACHI, LTD. |
发明人 |
YAMADA,NAOKI;SATO, HIROSHI;TSUJIKAWA, TETSUYA;MIYAZAWA, KAZUYUKI |
分类号 |
G11C16/06;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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