发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE: A nonvolatile semiconductor storage device in which multilevel information is to be stored in one memory cell by setting a plurality of thresholds. CONSTITUTION: The each bit of data composed a plurality of bits is separately written on and read from one memory cell and the data are erased, in accordance wth address signals or control signals. Specifically, a memory array is accessed in accordance with three dimensional addresses of X,Y,and Z addresses and a plurality of bit data in one memory cell can be recognized with the Z address.
申请公布号 KR20000005160(A) 申请公布日期 2000.01.25
申请号 KR19987007828 申请日期 1998.10.01
申请人 HITACHI, LTD. 发明人 YAMADA,NAOKI;SATO, HIROSHI;TSUJIKAWA, TETSUYA;MIYAZAWA, KAZUYUKI
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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