| 摘要 |
PURPOSE: A method of manufacturing a charge storing electrode of semiconductor device is provided to pattern a Pt film using a hard mask having a larger etch selection ratio than the Pt film and then remove the hard mask, a remaining material after etching process and a polymer by a plasma etching process, thereby facilitating a next process and improving a feature of the device. CONSTITUTION: The method comprises the steps of: forming a intermediate insulating layer provided with a storing electrode contact on an upper portion of a semiconductor substrate, forming a stacked structure of a glue layer, a Pt film for the storing electrode and an insulating layer for a hard mask(18b) on the intermediate insulating layer, forming a photosensitive layer pattern for protecting a portion intended to be the storing electrode on an upper portion of the insulating layer for the hard mask, firstly etching the insulating layer using the photosensitive layer pattern as a etching mask, removing the photosensitive layer pattern, secondly etching the Pt film for the storing electrode and the glue layer using the insulating layer for the hard mask as a etching mask, thirdly etching the insulating layer and the polymer, and cleaning the stacked structure.
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