METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to obtain high packing density of a semiconductor device by obtaining a margin for a mask process. CONSTITUTION: A first conductive line spacer(3) is formed over a first conductive line (wordline)(2) and a sidewall on a semiconductor substrate(1). A first interleaving insulating film(4) is formed on an entire surface and a contact mask(5) for a landing plug contact hole is formed on the first interleaving insulating film using a photoresist. The first interleaving insulating film is partially etched using the contact mask to remain on the first conductive line topology. A first plug poly(6) is deposited on the entire surface and then partially etched. The first interleaving insulating film is etched by etching process having etching selectivity with the first plug poly. A second plug poly(7) is deposited on the entire surface and then etched to form a landing plug contact.