METHOD FOR FORMING ISOLATING INSULATOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A method of forming an isolating insulator of semiconductor devices is provided to simplify manufacturing process and improve its performance by using a simple oxidation process without sophisticated trench etching processes. CONSTITUTION: A method comprises several steps of forming a pad insulator(13) on a semiconductor substrate(11); forming an impurity region(19) by implanting oxygen ions(17) into the semiconductor substrate(11) using a photoresist pattern(15) defined an isolation region as an implantation mask; removing the photoresist pattern(15); and forming an isolating insulator(21) by reacting the implanted oxygen ions and the silicon using an oxidation process of the impurity region(19).