METHOD FOR FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to improve a electrical characteristic, resulting in characteristic and reliability of the device by preventing a short channel effect and punch through phenomenon. CONSTITUTION: A gate electrode (50) is formed by laminating a thermal oxidation film(20), a Ta2O5 film(30) and an oxide film(40) sequentially on a semiconductor substrate (10). Thereby it is possible to reduce a size of 1G bit DRAM, prevent a short channel effect and embody a device operated at a low power.